Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity
نویسندگان
چکیده
منابع مشابه
High-speed solar-blind AlGaN-based metal–semiconductor–metal photodetectors
Solar-blind AlGaN metal–semiconductor–metal (MSM) photodetectors with fast pulse response have been demonstrated. The devices were fabricated on MOCVD-grown epitaxial Al0.38Ga0.62N layers, using a microwave compatible fabrication process. The photodiode samples exhibited low leakage with dark current densities below 1 × 10 A/cm at 40 V reverse bias. Photoconductive gain-assisted photoresponse w...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2008
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2895643